Title of article
Surface reconstructions on GaAs(001)
Author/Authors
Ohtake، نويسنده , , Akihiro، نويسنده ,
Issue Information
ماهنامه با شماره پیاپی سال 2008
Pages
33
From page
295
To page
327
Abstract
This paper reviews the recent experimental findings on the atomic structures on the (001) surface of GaAs. We systematically studied the structure and composition of the GaAs(001) surfaces using reflection high-energy electron diffraction, reflectance difference spectroscopy, scanning tunneling microscopy, and X-ray photoelectron spectroscopy. We found that the As-rich c ( 4 × 4 ) β , c ( 4 × 4 ) α , and (2×4), and Ga-rich (6×6), c ( 8 × 2 ) , and (4×6) reconstructions are formed on the GaAs(001) surface critically depending on the preparation conditions. Atomic structures on these reconstructions will be discussed on the basis of the recent findings of experiments and first-principles calculations.
Keywords
GaAs(001) surface , reconstruction , Scanning tunneling microscopy , Reflection high-energy electron diffraction , Reflectance difference spectroscopy
Journal title
Surface Science Reports
Serial Year
2008
Journal title
Surface Science Reports
Record number
1893898
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