Title of article :
Electronic properties for the C2v and Cs isomers of Pr@C82 studied by Raman, resistivity and scanning tunneling microscopy/spectroscopy
Author/Authors :
Hosokawa، نويسنده , , Tomoko and Fujiki، نويسنده , , Satoshi and Kuwahara، نويسنده , , Eiji and Kubozono، نويسنده , , Yoshihiro and Kitagawa، نويسنده , , Hiroshi and Fujiwara، نويسنده , , Akihiko and Takenobu، نويسنده , , Taishi and Iwasa، نويسنده , , Yoshihiro، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2004
Pages :
4
From page :
78
To page :
81
Abstract :
Electronic properties of the major and minor isomers of Pr@C82, I (C2v) and II (Cs), are studied by Raman scattering, resistivity measurement, scanning tunneling microscopy (STM) and scanning tunneling spectroscopy (STS). The valences of the Pr atom in both isomers are determined to be +3 based on the Raman shift in the Pr–C82 stretching mode. The transport properties showed that both isomers are normal semiconductors with a small energy gap (Eg). STM of isomer I shows internal structures dependent on bias voltage Vs, and STS shows that this isomer is a semiconductor with Eg = 0.7 eV.
Journal title :
Chemical Physics Letters
Serial Year :
2004
Journal title :
Chemical Physics Letters
Record number :
1912542
Link To Document :
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