Title of article :
Improvement of the charge imbalance caused by the use of a p-type silicon anode in an organic light-emitting diode
Author/Authors :
Ran، نويسنده , , G.Z. and Wu، نويسنده , , Z.L. Frogbrook & M.A. Oliver، نويسنده , , G.L. and Xu، نويسنده , , A.G. and Qiao، نويسنده , , Y.P. and Wu، نويسنده , , S.K. and Yang، نويسنده , , B.R. and Qin، نويسنده , , G.G.، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2004
Pages :
5
From page :
401
To page :
405
Abstract :
An indium-tin oxide anode was replaced with a p-type silicon anode in a bilayer small-molecule organic light-emitting diode. As results, the current increased largely due to the enhanced hole injection and the higher conductivity of the Si anode; the luminous efficiency decreased significantly due to carrier-induced exciton quenching and the worse charge imbalance. Ultra-thin film of SiO2 grown on the silicon anode improved the luminous efficiency to a certain extent by restraining the hole injection; enhancing electron injection became more desired.
Journal title :
Chemical Physics Letters
Serial Year :
2004
Journal title :
Chemical Physics Letters
Record number :
1913722
Link To Document :
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