• Title of article

    Improvement of the charge imbalance caused by the use of a p-type silicon anode in an organic light-emitting diode

  • Author/Authors

    Ran، نويسنده , , G.Z. and Wu، نويسنده , , Z.L. Frogbrook & M.A. Oliver، نويسنده , , G.L. and Xu، نويسنده , , A.G. and Qiao، نويسنده , , Y.P. and Wu، نويسنده , , S.K. and Yang، نويسنده , , B.R. and Qin، نويسنده , , G.G.، نويسنده ,

  • Issue Information
    روزنامه با شماره پیاپی سال 2004
  • Pages
    5
  • From page
    401
  • To page
    405
  • Abstract
    An indium-tin oxide anode was replaced with a p-type silicon anode in a bilayer small-molecule organic light-emitting diode. As results, the current increased largely due to the enhanced hole injection and the higher conductivity of the Si anode; the luminous efficiency decreased significantly due to carrier-induced exciton quenching and the worse charge imbalance. Ultra-thin film of SiO2 grown on the silicon anode improved the luminous efficiency to a certain extent by restraining the hole injection; enhancing electron injection became more desired.
  • Journal title
    Chemical Physics Letters
  • Serial Year
    2004
  • Journal title
    Chemical Physics Letters
  • Record number

    1913722