Author/Authors :
Hao، نويسنده , , Shaogang and Zhou، نويسنده , , Gang and Wu، نويسنده , , Jian and Duan، نويسنده , , Wenhui and Gu، نويسنده , , Bing-Lin، نويسنده ,
Abstract :
The electronic structures and spin polarization characteristics of pure and Mn-doped closed zigzag GaN nanotubes are theoretically investigated. Owing to the hybridization of Mn 3d orbitals and N 2p orbitals, the spin-polarized electron current mainly comes from the contributions of the Mn atom and the nearest neighbor N atoms. The tunneling probability of spin-polarized electrons is sensitively dependent upon the corresponding doping states under the external electric field. We suggest that Mn-doped zigzag GaN nanotubes with Ga-riched caps, rather than Mn-doped armchair ones, could be used as a good candidate for the nanoscale spin-polarized field emitter.