• Title of article

    Buffer layer effect on ZnO nanorods growth alignment

  • Author/Authors

    Zhao، نويسنده , , Dongxu and Andreazza، نويسنده , , Caroline and Andreazza، نويسنده , , Pascal and Ma، نويسنده , , Jiangang and Liu، نويسنده , , Yichun and Shen، نويسنده , , Dezhen، نويسنده ,

  • Issue Information
    روزنامه با شماره پیاپی سال 2005
  • Pages
    4
  • From page
    335
  • To page
    338
  • Abstract
    Vertical aligned ZnO nanorods array was fabricated on Si with introducing a ZnO thin film as a buffer layer. Two different nucleation mechanisms were found in growth process. With using Au catalyst, Zn vapor could diffuse into Au nanoclusters with forming a solid solution. Then the ZnO nucleation site is mainly on the catalyst by oxidation of Au/Zn alloy. Without catalyst, nucleation could occur directly on the surface of buffer layer by homoepitaxy. The density and the size of ZnO nanorods could be governed by morphological character of catalyst and buffer layer. The nanorods growth is followed by vapor–solid mechanism.
  • Journal title
    Chemical Physics Letters
  • Serial Year
    2005
  • Journal title
    Chemical Physics Letters
  • Record number

    1915574