Title of article
Site-specific fragmentation caused by Si:1s core-level photoionization of F3SiCH2CH2Si(CH3)3 vapor
Author/Authors
Nagaoka، نويسنده , , S. and Tamenori، نويسنده , , Y. and Hino، نويسنده , , M. and Kakiuchi، نويسنده , , T. and Ohshita، نويسنده , , J. and Okada، نويسنده , , K. and Ibuki، نويسنده , , T. Uchikoshi T. S. Suzuki Y. Sakka، نويسنده , , I.H.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2005
Pages
5
From page
459
To page
463
Abstract
Ionic fragmentation caused by Si:1s photoionization of 1-trifluorosilyl-2-trimethylsilylethane [F3SiCH2CH2Si(CH3)3] vapor was studied by the energy-selected photoelectron photoion coincidence method and monochromatized synchrotron radiation. In the 1s photoionization at the Si atom bonded to three F atoms, H+ exceeded the other ions in the peak height, and production of SiF 3 + ion seemed to be reduced. On the other hand, the 1s photoionization at the other Si atom bonded to three CH3 groups enhanced production of H+ ion with high kinetic energy. These results suggest that Si:1s photoionization causes site-specific fragmentation.
Journal title
Chemical Physics Letters
Serial Year
2005
Journal title
Chemical Physics Letters
Record number
1916258
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