• Title of article

    Electron detachment energies of Al4P− and Ga4P−

  • Author/Authors

    Archibong، نويسنده , , Edet F. and Kandawa-Schulz، نويسنده , , Martha and Mvula، نويسنده , , Eino N.، نويسنده ,

  • Issue Information
    روزنامه با شماره پیاپی سال 2005
  • Pages
    5
  • From page
    341
  • To page
    345
  • Abstract
    Geometric and electronic structures of Al4P−, Al4P, Ga4P− and Ga4P are studied using B3LYP-DFT and CCSD(T) methods with the 6-311+G(2d) and 6-311+G(2df) one-particle basis sets. The anions have similar square pyramidal (C4v) gas phase equilibrium geometry while the neutral species possess the trapezium (C2v) planar geometry in accordance with the predictions of Boldyrev and Wang [A.I. Boldyrev, L.S. Wang, J. Phys. Chem. A 105 (2001) 10759]. Electron detachment processes from the ground electronic states of the anions are presented and an attempt is made to assign the features observed in the anion photoelectron spectra of Al4P− and Ga4P−.
  • Journal title
    Chemical Physics Letters
  • Serial Year
    2005
  • Journal title
    Chemical Physics Letters
  • Record number

    1916543