Title of article
Electron detachment energies of Al4P− and Ga4P−
Author/Authors
Archibong، نويسنده , , Edet F. and Kandawa-Schulz، نويسنده , , Martha and Mvula، نويسنده , , Eino N.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2005
Pages
5
From page
341
To page
345
Abstract
Geometric and electronic structures of Al4P−, Al4P, Ga4P− and Ga4P are studied using B3LYP-DFT and CCSD(T) methods with the 6-311+G(2d) and 6-311+G(2df) one-particle basis sets. The anions have similar square pyramidal (C4v) gas phase equilibrium geometry while the neutral species possess the trapezium (C2v) planar geometry in accordance with the predictions of Boldyrev and Wang [A.I. Boldyrev, L.S. Wang, J. Phys. Chem. A 105 (2001) 10759]. Electron detachment processes from the ground electronic states of the anions are presented and an attempt is made to assign the features observed in the anion photoelectron spectra of Al4P− and Ga4P−.
Journal title
Chemical Physics Letters
Serial Year
2005
Journal title
Chemical Physics Letters
Record number
1916543
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