Author/Authors :
Hsu، نويسنده , , Cheng-Liang and Chang، نويسنده , , Shoou-Jinn and Lin، نويسنده , , Yanru and Li، نويسنده , , Pin-Chou and Lin، نويسنده , , Tzer-Shen and Tsai، نويسنده , , Song-Yeu and Lu، نويسنده , , Tsung-Heng and Chen، نويسنده , , I-Cherng، نويسنده ,
Abstract :
Vertical single-crystal ZnO nanowires of were grown on ZnO:Ga/glass template by self-catalyzed vapor–liquid–solid (VLS) process at a low temperature of 520 °C. It was found that length of these ZnO nanowires was around 2.0 μm while the diameter of these nanowires was in between 70 and 150 nm. It was also found that the ZnO nanowires were structurally uniform, defect free and well oriented with pure wurtzite structure. UV photodetectors were then fabricated using a simple scheme. It was found that photocurrent to dark current contrast ratio of our ZnO nanowires photodetector was 67.5.
