Author/Authors :
Shi، نويسنده , , Shih-Chen and Chattopadhyay، نويسنده , , Surojit and Chen، نويسنده , , Chia-Fu and Chen، نويسنده , , Kuei-Hsien and Chen، نويسنده , , Li-Chyong، نويسنده ,
Abstract :
Aluminum nitride (AlN) nanostructures were prepared using thermal chemical vapour deposition process. At growth temperatures of 950 °C, AlN nanotips with apex diameters of 10 nm, base diameters of ∼100 nm, and length of ∼2000 nm were obtained. Whereas when the growth temperature was 1200 °C, we obtained shorter and thicker AlN nanorods. Compelling microscopic evidences were obtained to show that stacked AlN platelets of diminishing size formed the building blocks for the nanotips. A reducing Ehrlich–Schwoebel barrier introduced into a diffusion mediated growth model explains the formation of AlN nanorods at increasing growth temperatures.