Title of article
A novel photoluminescence transition influenced by O implantation in ZnO bulk
Author/Authors
Zhong، نويسنده , , Hongmei and Chen، نويسنده , , Xiaoshuang and Sun، نويسنده , , L.Z and LU، نويسنده , , W. and Zhao، نويسنده , , Q.X. and Willander، نويسنده , , M.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2006
Pages
3
From page
309
To page
311
Abstract
The bulk zinc oxide (ZnO) sample implanted O with implantation concentration of 5 × 1019/cm3 was investigated by photoluminescence. A novel transition at emission energy of 3.08 eV at 77 K appears in the O-implanted sample. In order to find the origin of the novel transition, the O-implanted effects on the luminescence of ZnO bulk have been studied by first principle calculations based on the local density approximation. The theoretical results show that the novel transition at emission energy of 3.08 eV is attributed to O-antisite (Ozn) produced by O-implanted procedure.
Journal title
Chemical Physics Letters
Serial Year
2006
Journal title
Chemical Physics Letters
Record number
1918142
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