• Title of article

    Comparison of p-type and n-type organic field-effect transistors using nickel coordination compounds

  • Author/Authors

    Taguchi، نويسنده , , Tomohiro and Wada، نويسنده , , Hiroshi and Kambayashi، نويسنده , , Takuya and Noda، نويسنده , , Bunpei and Goto، نويسنده , , Masanao and Mori، نويسنده , , Takehiko and Ishikawa، نويسنده , , Ken and Takezoe، نويسنده , , Hideo، نويسنده ,

  • Issue Information
    روزنامه با شماره پیاپی سال 2006
  • Pages
    4
  • From page
    395
  • To page
    398
  • Abstract
    Organic field-effect transistors (OFETs) using metal complexes, bis(4-methyl-1,2-phenylenediamino) nickel (1) and bis(dithiobenzyl) nickel (2) were fabricated, and the transistor characteristics were measured in air and under vacuum. Compound 1 is a strong donor and oxidized at the redox potential of 0 V, while 2 is an acceptor and reduced to an anion around the same redox potential. Compound 1 shows p-type characteristics, whereas 2 exhibits n-type characteristics. Atmospheric oxygen increases both the ‘on’ and ‘off’ currents in p-type transistors of 1. The n-type characteristics of 2 are maintained in a few minutes in air, but degenerated in a few hours.
  • Journal title
    Chemical Physics Letters
  • Serial Year
    2006
  • Journal title
    Chemical Physics Letters
  • Record number

    1918197