Title of article
Comparison of p-type and n-type organic field-effect transistors using nickel coordination compounds
Author/Authors
Taguchi، نويسنده , , Tomohiro and Wada، نويسنده , , Hiroshi and Kambayashi، نويسنده , , Takuya and Noda، نويسنده , , Bunpei and Goto، نويسنده , , Masanao and Mori، نويسنده , , Takehiko and Ishikawa، نويسنده , , Ken and Takezoe، نويسنده , , Hideo، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2006
Pages
4
From page
395
To page
398
Abstract
Organic field-effect transistors (OFETs) using metal complexes, bis(4-methyl-1,2-phenylenediamino) nickel (1) and bis(dithiobenzyl) nickel (2) were fabricated, and the transistor characteristics were measured in air and under vacuum. Compound 1 is a strong donor and oxidized at the redox potential of 0 V, while 2 is an acceptor and reduced to an anion around the same redox potential. Compound 1 shows p-type characteristics, whereas 2 exhibits n-type characteristics. Atmospheric oxygen increases both the ‘on’ and ‘off’ currents in p-type transistors of 1. The n-type characteristics of 2 are maintained in a few minutes in air, but degenerated in a few hours.
Journal title
Chemical Physics Letters
Serial Year
2006
Journal title
Chemical Physics Letters
Record number
1918197
Link To Document