Electronic properties of Cs-atom doped aluminum and silicon clusters: AlnCsm and SinCsm

The effect of Cs atom doping on metallic aluminum clusters and covalent silicon clusters, AlnCsm (n = 5–14, m = 0–3) and SinCsm (n = 5–16, m = 0–3), was examined by mass spectrometry and anion photoelectron spectroscopy. For clusters containing Cs atom(s), the electron affinities of both clusters are generally decreased and the following characteristic features are observed: for AlnCsm, Cs-atom doping causes (1) electron filling into the electronic shell structure of the Aln clusters and (2) geometrical packing of icosahedral 13-atoms, while for SinCsm Cs-atom doping enhances electronic stability to be ascribed to pure Sin clusters, particularly at (n, m) = (10, 3) and (13, 1).