Author/Authors :
Sharma، نويسنده , , R.B. and Late، نويسنده , , D.J. and Joag، نويسنده , , D.S. and Govindaraj، نويسنده , , A. and Rao، نويسنده , , C.N.R.، نويسنده ,
Abstract :
Field electron emission (FE) properties of boron and nitrogen doped carbon nanotubes (CNTs) grown in situ on tungsten (W) tips and silicon substrates have been studied. For a total emission current of 1 μA, the current density (J) was 4 A/cm2 at 368 V/μm for B-doped CNTs and at 320 V/μm for N-doped CNTs grown on W tips, compared with the value of 1.5 A/cm2 at 290 V/μm for undoped CNTs. FE currents upto 400 μA drawn from both B- and N-doped CNTs are stable for more than 3 h.
