Title of article :
Reaction of the ground-state Al(2P) with silane: Examination of the potential energy surfaces for complexation, insertion and interconversion
Author/Authors :
Moc، نويسنده , , Jerzy، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2006
Pages :
6
From page :
43
To page :
48
Abstract :
A route of formation of SiH3AlH radical via insertion of the ground-state Al(2P) into SiH4 and subsequent rearrangements to various primary insertion product isomers including more stable SiH2AlH2 radical are predicted from the ab initio single-reference CCSD(T) and multi-reference MRMP2 calculations. For the insertion reaction, the lowest energy doublet (2A′) potential energy surface is studied within Cs symmetry. Special attention is paid to the weakly bound Al⋯SiH4 complexes formed in the initial stage of the reaction. The results presented are of relevance to recent matrix studies on reactivity of the Al/SiH4 system.
Journal title :
Chemical Physics Letters
Serial Year :
2006
Journal title :
Chemical Physics Letters
Record number :
1920104
Link To Document :
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