Author/Authors :
Chen، نويسنده , , L.L. and Ye، نويسنده , , Z.Z. and Lu، نويسنده , , J.G. and He، نويسنده , , H.P. and Zhao، نويسنده , , B.H. and Zhu، نويسنده , , L.P. and Chu، نويسنده , , Paul K. and Shao، نويسنده , , L.، نويسنده ,
Abstract :
The influence of indium concentrations on electrical properties of In–N co-doped ZnO thin films has been studied. Based on Hall-effect measurements and analyses, impurity scattering is the dominant mechanism determining the diminished mobility in ZnO with higher In concentration. X-ray photoelectron spectroscopy reveals that the presence of In enhances the solubility of N with the formation of In–N and Zn–N bonds. The optimal properties, namely resistivity of 16.1 Ω cm and Hall mobility of 1.13 cm2 V−1 s−1, are obtained at an indium concentration of 0.14 at.%. The diffraction angle of co-doped ZnO is closest to that of un-doped ZnO.
