Author/Authors :
Zeng، نويسنده , , Y.J. and Ye، نويسنده , , Z.Z. and Lu، نويسنده , , Y.F. and Lu، نويسنده , , J.G and Xu، نويسنده , , W.Z. and Zhu، نويسنده , , L.P. and Zhao، نويسنده , , B.H. and Che، نويسنده , , Y.، نويسنده ,
Abstract :
The authors report on comparative study on ultraviolet (UV) photoconductivity of p-type ZnO:N films and n-type ZnO epilayer. As compared with the ZnO epilayer, the ZnO:N films show much higher photoconductivity but with faster decay. Surface adsorption of C and O, as identified by X-ray photoelectron spectroscopy, is believed to be a major contribution to the UV photoconductivity. The surface adsorption and photodesorption process, combined with a competition between holes and electrons, in p-type ZnO:N, is proposed tentatively, providing qualitative agreement with the observed behaviors.
