Author/Authors :
Zang، نويسنده , , C.H. and Zhao، نويسنده , , D.X. and Tang، نويسنده , , Y. and Guo، نويسنده , , Z. and Zhang، نويسنده , , J.Y. and Shen، نويسنده , , D.Z. and Liu، نويسنده , , Y.C.، نويسنده ,
Abstract :
Single-crystal Sb doped ZnO nanowires were fabricated on Si (1 0 0) substrate by a chemical vapor deposition method. The photoluminescence properties of ZnO nanowires were studied with the temperature ranging from 81 to 306 K. At 81 K, the recombination of the acceptor-bound exciton was predominant in PL spectrum, which was attributed to the transition of the (SbZn–2VZn) complex bound exciton. The activation of A0X and the acceptor binding energy had been calculated to be 16.8 and 168 meV, respectively.
