Author/Authors :
Sun، نويسنده , , J.C. and Liang، نويسنده , , H.W. and Zhao، نويسنده , , J.Z. and Bian، نويسنده , , J.M. and Feng، نويسنده , , Q.J. and Hu، نويسنده , , L.Z. and Zhang، نويسنده , , H.Q. and Liang، نويسنده , , X.P. and Luo، نويسنده , , Y.M. and Du، نويسنده , , G.T.، نويسنده ,
Abstract :
ZnO homojunction light emitting device (LED) with n-ZnO:Ga/p-ZnO:N structure was fabricated on sapphire substrate by metal organic chemical vapor deposition. The reproducible p-type ZnO:N layer with hole concentration of 1.29 × 1017 cm−3 was formed with NH3 as N doping source followed by thermal annealing in N2O plasma protective ambient. The device exhibited desirable rectifying behavior. Distinct electroluminescence emission centered at 3.2 eV and 2.4 eV were detected from this device under forward bias at room temperature. The intensive ultraviolet emission was comparable to the visible emission in the electroluminescence spectrum, which represent remarkable progress in the performance of ZnO homojunction LED.
