Author/Authors :
Ho، نويسنده , , Shu-Te and Wang، نويسنده , , Chiu-Yen and Liu، نويسنده , , Hsiang-Lin and Lin، نويسنده , , Heh-Nan and Chang، نويسنده ,
Abstract :
An effective method for the catalyst-free selective-area growth of single-crystalline zinc oxide nanowires on patterned substrates defined by e-beam lithography and treated by chemical etching with increased surface roughness is reported. The nanowire growth is realized via a surface-roughness-assisted vapor–solid mechanism by thermal evaporation. The nanowires are vertically aligned on sapphire and randomly oriented on silicon substrates.
