Title of article
Catalyst-free selective-area growth of vertically aligned zinc oxide nanowires
Author/Authors
Ho، نويسنده , , Shu-Te and Wang، نويسنده , , Chiu-Yen and Liu، نويسنده , , Hsiang-Lin and Lin، نويسنده , , Heh-Nan and Chang، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2008
Pages
4
From page
141
To page
144
Abstract
An effective method for the catalyst-free selective-area growth of single-crystalline zinc oxide nanowires on patterned substrates defined by e-beam lithography and treated by chemical etching with increased surface roughness is reported. The nanowire growth is realized via a surface-roughness-assisted vapor–solid mechanism by thermal evaporation. The nanowires are vertically aligned on sapphire and randomly oriented on silicon substrates.
Journal title
Chemical Physics Letters
Serial Year
2008
Journal title
Chemical Physics Letters
Record number
1924950
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