Title of article
Negatively charged GaAs clusters
Author/Authors
Gutsev، نويسنده , , G.L. and Mochena، نويسنده , , M.D. and O’Neal Jr.، نويسنده , , R.H. and Saha، نويسنده , , B.C.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2009
Pages
4
From page
249
To page
252
Abstract
Electronic and geometrical structure of (GaAs)n clusters for n = 12, 36, 48, 54, and 60 together with related clusters (BN)12, (CdS)12, (CdSe)12, (CdTe)12, and C108 are computed using density functional theory with generalized gradient approximation. Our results show for the first time that GaAs clusters do possess an exceptional capability to bind extra electrons. The extra electrons in the GaAs dianions appear to occupy valence-like states.
Journal title
Chemical Physics Letters
Serial Year
2009
Journal title
Chemical Physics Letters
Record number
1926962
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