Growth of single and multi-layer graphene on Ir(1 0 0)

We report on the high temperature chemical vapor deposition of ethylene on Ir(1 0 0) and the resulting development of single and multi-layer graphene films. By employing X-ray photoemission electron spectromicroscopy, low energy electron microscopy and related microprobe methods, we investigate nucleation and growth of graphene as a function of the concentration of the chemisorbed carbon lattice gas. Further, we characterize the morphology and crystal structure of graphene as a function of temperature, revealing subtle changes in bonding occurring upon cooling from growth to room temperature. We also identify conditions to grow multi-layer flakes. Their thickness, unambiguously determined through the analysis of the intensity of the Ir 4f and C 1s emission, is correlated to the electron reflectivity at very low kinetic energy. The effective attenuation length of electrons in few-layer graphene is estimated to be 4.4 and 8.4 إ at kinetic energies of 116 and 338 eV, respectively.