Interface thermal conductance and rectification in hybrid graphene/silicene monolayer

This paper investigates the interface thermal conductance G and interface thermal rectification R of hybrid GE/SE monolayers via molecular dynamic simulations. The results show that G not only increases with the temperature but also with the monolayer length at a given temperature until it reaches a saturated value. At 300 K, the saturated value is found to be ∼250 MW/m2 K. In contrast, R decreases with increasing monolayer length and temperature. Furthermore, both G and R can be significantly affected by tensile strain applied on SE along the interface direction, but both are almost independent of the heat flux J. A critical value J = 42 GW/m2 is determined, above which low-frequency kinetic waves are excited and provide an additional channel for heat transport. Detailed phonon spectra analyses are conducted to understand the thermal transport mechanisms.