Growth of high-quality ITO thin films at low temperature by tuning the oxygen flow rate using the nano-cluster deposition (NCD) technique

High quality indium tin oxide (ITO) thin films were grown by nano-cluster deposition (NCD) technique at a low temperature. The lowest resistivity (∼2 × 10−4 Ω cm) and highest optical transparency (90%) were obtained for films deposited with optimum oxygen gas flow rate of 30 sccm (standard cc min−1). The absence of hydroxyl groups, organic contamination and carbon content in the films grown at a low temperature of 250 °C by NCD indicates the complete decomposition of metal–organic precursors.