Author/Authors :
Ren، نويسنده , , Q.Q. and Dang، نويسنده , , D.Y. and Gong، نويسنده , , H.R. and Fan، نويسنده , , J.L. and Zhao، نويسنده , , Y.M.، نويسنده ,
Abstract :
First principles calculation reveals that the density functional dispersion correction (DFT-D2) method, instead of generalized gradient approximation (GGA) and local density approximation (LDA), should be appropriate to reflect various properties of W–C interfaces, and that the C/W interface (deposition of C on W) possesses higher interface strength and lower interface energy than the W/C interface (deposition of W on C). Calculations also show that compared with the W/C interface, a stronger chemical bonding is formed in the C/W interface with lower W–C bond length as well as bigger charge transfers between C and W atoms. In addition, it is also found that the WC carbide should be more easily formed in the C/W interface than that in the W/C interface. The calculated results are in good agreement with experimental observations in the literature.