Title of article :
The surprising oxidation state of fumed silica and the nature of water binding to silicon oxides and hydroxides
Author/Authors :
Wang، نويسنده , , Tsang-Hsiu and Gole، نويسنده , , James L. and White، نويسنده , , Mark G. and Watkins، نويسنده , , Clifton and Street، نويسنده , , Shane C. and Fang، نويسنده , , Zongtang and Dixon، نويسنده , , David A.، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2011
Pages :
7
From page :
159
To page :
165
Abstract :
X-ray photoelectron spectroscopy (XPS) data demonstrate that the average formal oxidation state of silicon in fumed silica (CAB-O-SIL®) is +1 as opposed to the usual +4. Electronic structure calculations on model molecular clusters and comparison with XPS data for silicon compounds in known oxidation states suggest less hydrophilic character for CAB-O-SIL® than the oxides of silicon with Si in an average formal +3 or +4 oxidation state. Once the +3 oxidation state is formed, water on the fumed silica surface facilitates the ready conversion of the Si in an average +3 oxidation state to an average +4 oxidation state.
Journal title :
Chemical Physics Letters
Serial Year :
2011
Journal title :
Chemical Physics Letters
Record number :
1930532
Link To Document :
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