Title of article
Short-circuit diffusion growth of long bi-crystal CuO nanowires
Author/Authors
Hansen، نويسنده , , Benjamin J. and Chan، نويسنده , , Hoi-lam (Iris) and Lu، نويسنده , , Jian and Lu، نويسنده , , Ganhua and Chen، نويسنده , , Junhong، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2011
Pages
5
From page
41
To page
45
Abstract
The growth of CuO nanowires (NWs) through direct oxidation of copper is widely utilized. We give further evidence of a short-circuit, grain boundary diffusion mechanism. First, we show enhanced CuO NW growth through oxidizing nanocrystalline Cu. Second, we show the presence of a bi-crystal structure with a Cu rich (1 1 −2)/(0 0 −1) boundary along the entire length of the NW. Our analysis suggests that the growth of CuO NWs occurs via the short-circuit diffusion of Cu ions across the Cu2O layer, followed by short-circuit diffusion along the CuO NW bi-crystal grain boundary and to the NW tip, where subsequent oxidation occurs.
Journal title
Chemical Physics Letters
Serial Year
2011
Journal title
Chemical Physics Letters
Record number
1930936
Link To Document