Title of article :
Ab initio simulations of silicene hydrogenation
Author/Authors :
Osborn، نويسنده , , Tim H. and Farajian، نويسنده , , Amir A. and Pupysheva، نويسنده , , Olga V. and Aga، نويسنده , , Rachel S. and Lew Yan Voon، نويسنده , , L.C.، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2011
Pages :
5
From page :
101
To page :
105
Abstract :
Silicene, a silicon equivalent of graphene, is a newly synthesized nanostructure with unique features and promising potential. Using density functional theory, the geometries and energetics of partially hydrogenated silicene (hydrogenation ratios between 3.1 and 100 atom%) are calculated. We find that the hydrogenation energy increases with the hydrogenation ratio, reaching 3.01 eV/H for complete hydrogenation. Molecular dynamics simulations reveal the stability of the adsorption configurations. Our results show that partial and patterned hydrogenation, achievable through exposing silicene to hydrogen gas with various densities and/or masking techniques, provide the attractive possibility of metal/semiconductor/insulator functionality within the same silicon nanosheet.
Journal title :
Chemical Physics Letters
Serial Year :
2011
Journal title :
Chemical Physics Letters
Record number :
1931602
Link To Document :
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