Author/Authors :
Martinez، نويسنده , , E. and Grampeix، نويسنده , , H. and Desplats، نويسنده , , O. and Herrera-Gomez، نويسنده , , A. and Ceballos-Sanchez، نويسنده , , O. and Guerrero، نويسنده , , J. and Yckache، نويسنده , , K. and Martin، نويسنده , , F.، نويسنده ,
Abstract :
We report on the effect of vacuum anneal on interfacial oxides formed between Al2O3 and III–V semiconductors. On InGaAs, no interfacial oxide is detected after annealing at 600 °C under UHV whereas annealing under secondary vacuum favours the regrowth of thin InGaOx interfacial oxide. Lowering the temperature at 400 °C highlights the effect of III–V substrates since In–OH bonds are only formed on InAs by OH release from TMA/H2O deposited alumina. On InGaAs, regrowth of InGaOx is observed, as a result of preferential oxidation of Ga. On InP, a transition from InPOx to POx is highlighted.
