Title of article :
Upright-standing SnO2 nanowalls: Fabrication, dual-photosensitization and photovoltaic properties
Author/Authors :
Shinde، نويسنده , , Dipak V. and Lim، نويسنده , , Iseul and Kim، نويسنده , , Chang Sam and Lee، نويسنده , , Joong Kee and Mane، نويسنده , , Rajaram S. and Han، نويسنده , , Sung-Hwan، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2012
Pages :
4
From page :
66
To page :
69
Abstract :
We report on fabrication of upright-standing SnO2 nanowalls aligned on FTO substrates by a facile wet chemical method at low temperature. These nanowalls are dual-photosensitized with CdS quantum dots and Z907 dye molecules in order to construct panchromatic dye-sensitized solar cells. We demonstrate that thin CdS quantum dot layer not only acts as a blocking layer preventing recombination of charge carriers, but also contributes as a light absorber. A 158% improvement in power conversion efficiency is observed, which is attributed to improved light absorption, reduced recombination and improved charge collection in presence of CdS quantum dot interlayer.
Journal title :
Chemical Physics Letters
Serial Year :
2012
Journal title :
Chemical Physics Letters
Record number :
1933413
Link To Document :
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