• Title of article

    Comprehensive investigations on the feasibility of nitrogen as a p-type dopant in ZnO

  • Author/Authors

    Li، نويسنده , , Ping and Deng، نويسنده , , Shenghua and Liu، نويسنده , , Guohong and Hou، نويسنده , , Kui، نويسنده ,

  • Issue Information
    روزنامه با شماره پیاپی سال 2012
  • Pages
    4
  • From page
    92
  • To page
    95
  • Abstract
    It is controversial whether nitrogen can dope ZnO p-type or not. According to our first-principles calculations, no defects or defect complexes can result in p-type conductivity in ZnO. NO and NZn–2Oi have deep transition levels, while NZn–2VZn has a high formation energy at the valence band maximum (VBM), rendering all of them unlikely to contribute to the p-type conductivity. Besides, NZn will heavily compensate the p-type doping of ZnO in O-rich conditions, while (N2)O and (NO)O will do that in Zn-rich conditions. All these results raise serious questions about the feasibility of nitrogen as a p-type dopant.
  • Journal title
    Chemical Physics Letters
  • Serial Year
    2012
  • Journal title
    Chemical Physics Letters
  • Record number

    1933479