Author/Authors :
Li، نويسنده , , Qiang and Ye، نويسنده , , Bonian and Hao، نويسنده , , Yingping and Liu، نويسنده , , Jiandang and Zhang، نويسنده , , Jie and Zhang، نويسنده , , Lijuan and Kong، نويسنده , , Wei and Weng، نويسنده , , Huimin and Ye، نويسنده , , Bangjiao، نويسنده ,
Abstract :
MgO single crystals were implanted with 70 keV C/N/O ions at room temperature with respective doses of 2 × 1016 and 2 × 1017 ions/cm2. All samples with high-dose implantation showed room temperature hysteresis in magnetization loops. Magnetization and slow positron annihilation measurements confirmed that room temperature ferromagnetism in O-implanted samples was attributed to the presence of Mg vacancies. Furthermore, the introduction of C or N played more effective role in ferromagnetic performance than Mg vacancies. Moreover, the magnetic moment possibly occurred from the localized wave function of unpaired electrons and the exchange interaction formed a long-range magnetic order.
