High-k ZrO2 dielectric thin films on GaAs semiconductor with reduced regrowth of native oxides by atomic layer deposition

GaAs surfaces were self-cleaned through fast pulsing of the Trimethylaluminum (TMA) precursor by reducing and restraining the regrowth of native oxides using the atomic layer deposition (ALD). The thermal conversion of As–O in to Ga–O reduction was evaluated by the X-ray photoelectron spectroscopy. Metal oxide semiconductor (MOS) capacitor was using ZrO2 as high-k gate dielectric on n-GaAs substrates, and their superior performance in electrical properties has been demonstrated. ZrO2/GaAs capacitor exhibits superior capacitance–voltage characteristics reduced leakage current due to reduced interfacial trap density. These studies have remarkable significance for the development of high-throughput innovative electronics, using ZrO2 as high-k dielectric.