Efficiency enhancement of CuInS2 quantum dot sensitized TiO2 photo-anodes for solar cell applications

Two-step process had been employed to enhance the photovoltaic performance of CuInS2 quantum dot sensitized solar cells. 3.5 nm MPA-capped CuInS2 quantum dots were firstly adsorbed on the TiO2 nanoparticle films by assembly linking technique. And then large amount of CuInS2 quantum dots were deposited on the photo-anodes by SILAR technique. The UV–Vis absorption edge of the photo-anodes from two-step process had greatly expanded from 400 nm to 800 nm. These solar cells exhibited the IPCE peak value of 36% and photovoltaic efficiency of 1.85%, which was much higher than that from individual assembly linking and SILAR technique.