Title of article
Interface chemistry of H2O on GaAs nanowires probed by near ambient pressure X-ray photoelectron spectroscopy
Author/Authors
Zhang، نويسنده , , Xueqiang and Lamere، نويسنده , , Edward and Liu، نويسنده , , Xinyu and Furdyna، نويسنده , , Jacek K. and Ptasinska، نويسنده , , Sylwia، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2014
Pages
5
From page
51
To page
55
Abstract
Interface chemistry of H2O on GaAs nanowires is investigated by in situ X-ray photoelectron spectroscopy (XPS) at elevated water vapor pressures (from UHV to 5 mbar) and temperatures (from room temperature to 400 °C). Surface-assisted water dissociation leads to oxidation and hydroxylation of surface Ga atoms. In comparison with the simple planar GaAs(1 0 0) crystal, the H2O dissociation process on GaAs nanowires is greatly enhanced at elevated pressures and temperatures.
Journal title
Chemical Physics Letters
Serial Year
2014
Journal title
Chemical Physics Letters
Record number
1936757
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