Author/Authors :
Zhang، نويسنده , , Xueqiang and Lamere، نويسنده , , Edward and Liu، نويسنده , , Xinyu and Furdyna، نويسنده , , Jacek K. and Ptasinska، نويسنده , , Sylwia، نويسنده ,
Abstract :
Interface chemistry of H2O on GaAs nanowires is investigated by in situ X-ray photoelectron spectroscopy (XPS) at elevated water vapor pressures (from UHV to 5 mbar) and temperatures (from room temperature to 400 °C). Surface-assisted water dissociation leads to oxidation and hydroxylation of surface Ga atoms. In comparison with the simple planar GaAs(1 0 0) crystal, the H2O dissociation process on GaAs nanowires is greatly enhanced at elevated pressures and temperatures.
