Title of article :
Far-infrared emission of Ti-based oxides
Author/Authors :
Lee، نويسنده , , Seunghee and Kim، نويسنده , , Yongseon and Kang، نويسنده , , Shinhoo Kang، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2011
Pages :
5
From page :
86
To page :
90
Abstract :
Various Ti-based oxides were used as far-infrared (FIR) radiation sources. The temperature increases and emissivities of aluminum panels coated with these oxides were measured. To explain their different FIR emissivities, the electronic energy levels of these oxides were calculated using the direct-variational Xα molecular orbital method. Ti2O3 and TiO were found to be more effective materials as FIR sources than was TiO2 in the wavelength range 3–7 μm. The wide band gap of TiO2 is the cause of its relatively low emissivity.
Keywords :
Far-infrared radiation , Energy level , DV-Xa , emission , Electron states
Journal title :
Journal of Molecular Structure
Serial Year :
2011
Journal title :
Journal of Molecular Structure
Record number :
1969741
Link To Document :
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