Title of article :
Influences of halogen atoms on indole-3-acetonitrile (IAN): Crystal structure and Hirshfeld surfaces analysis
Author/Authors :
Luo، نويسنده , , Yanghui and Yang، نويسنده , , Li-Jing and Han، نويسنده , , Guangjun and Liu، نويسنده , , Qingling and Wang، نويسنده , , Wei and Ling، نويسنده , , Yang and Sun، نويسنده , , Bai-Wang، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2014
Abstract :
Crystal structural investigations and Hirshfeld surface analysis of three halogen atoms (4-Cl, 6-Cl and 4-Br) substituted indole-3-acetonitrile (IAN) were reported in this work. The structures of the present three compounds were characterized by Infrared spectra, Elemental analyses, NMR spectra, differential scanning calorimetry (DSC), thermogravimetric analyses (TGA) and hot stage microscopy (HSM). The Hirshfeld surfaces analysis in terms of crystal structure, intermolecular interactions and π⋯π stacking motifs were performed. We found that the different kinds of halogen atoms and the different substituted positions have a significant effect on the crystal structures, molecular π⋯π stacking motifs, melting points, and the nature of intermolecular interactions for IANs.
Keywords :
substituent effect , Indole-3-acetonitrile (IAN) , Hirshfeld surfaces , ??? stacking motifs
Journal title :
Journal of Molecular Structure
Journal title :
Journal of Molecular Structure