Title of article :
Effect of Thickness on the Structural Properties of Tellurium Film Prepared by Thermal Evaporation
Author/Authors :
Manouchehrian، M. نويسنده Department of physics, Science Faculty, South Tehran Branch, Islamic Azad University, Tehran, Iran. , , Larijani، M. M. نويسنده Nuclear Science and Technology Research Institute, P. O. Box 31485-498, Karaj, Iran. , , Moghri Moazzen، M. A. نويسنده Young Researchers and Elite Club, Karaj Branch, Islamic Azad University, Karaj, Iran. ,
Issue Information :
فصلنامه با شماره پیاپی 0 سال 2013
Pages :
4
From page :
277
To page :
280
Abstract :
در اين پژوهش، فيلم تلوريوم با ضخامت 100 تا 250 نانومتر با روش تبخير حرارتي بر روي زيرلايه سراميكي در دماي K373 نشانده شد. ضخامت فيلم با روش Rutherford backscattering اندازه گيري شد. تاثير ضخامت بر روي ساختار، مورفولوژي و پيوندهاي مولكولي با روش هاي XRD، SEM و رامان مورد بررسي قرار گرفت. نتايج XRD افزايش بلورينگي را در اثر افزايش ضخامت فيلم نشان داد. تصاوير SEM نشان داد كه دانسيته فيلم و حفره ها با افزايش ضخامت، كاهش مي يابند. طيف سنجي رامان نيز نشان داد كه تنها در دماي اتاق پيوندهاي مولكولهاي TeO2 بر روي سطح تشكيل مي شوند.
Abstract :
In this research, tellurium (Te) film with thicknesses of 100- 250 nm were deposited on ceramic substrates by thermal evaporation at 373 K. The thickness of the film was determined by Rutherford backscattering spectroscopy. The influence of the thickness on the structural, morphological and molecular bonds was characterized using XRD, scanning electron microscope, and Raman spectroscopy. The XRD results confirmed that increasing the thickness, increased the intensity of the peaks, indicating increased crystallinity. SEM images indicated that the density of the film and holes in the film decreased as thickness increased. The Raman spectrum revealed that the TeO2 molecular bond formed on the surface only at room temperature up to 100 nm in thickness; as thickness increased, this bond was observed at 323 K.
Journal title :
Journal of NanoStructures
Serial Year :
2013
Journal title :
Journal of NanoStructures
Record number :
1984325
Link To Document :
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