Preliminary study of a new type of gas microstrip chamber on a sapphire substrate

First results of a series of studies on gas microstrip chamber prototypes prepared on sapphire substrates are presented. The sapphire substrates were prepared by ion-assisted deposition technique in one of the chambers and by placing an approximately 1 μm boro-silica glass film on a second chamber. Responses to X-rays and beta electrons and high rate performance were studied with argon-isobutane and argon—DME gas mixtures. Counting rates of 6 × 105 counts/mm2s) were achieved for X-rays from an X-ray generator with ∼ 50% change in gas gain. The timing response (relative to a fast plastic scintillator) of ultraviolet-light-ionized photoelectrons were studied with an argon—ethane gas mixture. Timing peaks having widths of less than 85 ns (σ) were obtained. Details of the experimental setup and results are presented.