Title of article :
Enhancement Scheme of 1T DRAM for Low Voltage Operation in Video Processing
Author/Authors :
Sood، Mamta نويسنده MTECH TIT Collage Bhopal , , Beohar، Ankur نويسنده MTECH TIT Collage Bhopal , , khan، Kasif نويسنده MTECH TIT Collage Bhopal ,
Issue Information :
روزنامه با شماره پیاپی سال 2013
Pages :
4
From page :
540
To page :
543
Abstract :
BJT-based 1T-DRAM cell has widely used mainly because of its full compatibility with the standard SOI(silicon insulator) processing and its potentially excellent performance Such as high sensing margin and retention characteristics [2] This Paper is mainly based on improving the 1T DRAM for Low voltage operation in video processing by reduction of DRAM Data access energy consumption using either selective epitaxial process or by an ion implementation technique. In this paper we presents a strategy for mapping pixels into the memory for video applications such as MPEG processing, thereby minimizing the transfer overhead between memory and the processing .DRAM architecture is better in video processing for unbalanced images. In this paper we have define techniques to reduce 1TDRAM energy consumption up to 96%
Journal title :
International Journal of Electronics Communication and Computer Engineering
Serial Year :
2013
Journal title :
International Journal of Electronics Communication and Computer Engineering
Record number :
1993592
Link To Document :
بازگشت