Title of article :
Enhancement Scheme of 1T DRAM for Low Voltage Operation in Video Processing
Author/Authors :
Sood، Mamta نويسنده MTECH TIT Collage Bhopal , , Beohar، Ankur نويسنده MTECH TIT Collage Bhopal , , khan، Kasif نويسنده MTECH TIT Collage Bhopal ,
Issue Information :
روزنامه با شماره پیاپی سال 2013
Abstract :
BJT-based 1T-DRAM cell has widely used
mainly because of its full compatibility with the standard
SOI(silicon insulator) processing and its potentially excellent
performance Such as high sensing margin and retention
characteristics [2] This Paper is mainly based on improving
the 1T DRAM for Low voltage operation in video processing
by reduction of DRAM Data access energy consumption
using either selective epitaxial process or by an ion
implementation technique. In this paper we presents a
strategy for mapping pixels into the memory for video
applications such as MPEG processing, thereby minimizing
the transfer overhead between memory and the processing
.DRAM architecture is better in video processing for
unbalanced images. In this paper we have define techniques
to reduce 1TDRAM energy consumption up to 96%
Journal title :
International Journal of Electronics Communication and Computer Engineering
Journal title :
International Journal of Electronics Communication and Computer Engineering