Title of article
Radiation hardness studies on silicon detectors in fast neutron fields
Author/Authors
Angelescu، نويسنده , , T. and Cheremukhin، نويسنده , , A.E. and Ghete، نويسنده , , V.M. and Ghiord?nescu، نويسنده , , N. and Golutvin، نويسنده , , I.A. and Lazanu، نويسنده , , S. and Lazanu، نويسنده , , I. and Mihul، نويسنده , , A. G. Radu، نويسنده , , A. and Susova، نويسنده , , N.Yu. and Vasilescu، نويسنده , , A. and Zamyatin، نويسنده , , N.I.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 1995
Pages
9
From page
55
To page
63
Abstract
Electrical and α-particle PHA damage tests for ELMA and SGS silicon detectors irradiated at two different fast neutron facilities, in the range of fluences from 1010 to 1015 n/cm2 are presented. Results on depletion voltage, α damage constants and self-annealing are discussed. Supplementary damage effects due to nuclear reactions are evaluated. The spread of the data in the self-annealing corrected α damage constant versus hardness parameter plot shows the difficulty in comparing the results obtained in different neutron environments. A systematics is however possible, in the framework of standardization of the “1 MeV equivalent” neutron spectrum.
Journal title
Nuclear Instruments and Methods in Physics Research Section A
Serial Year
1995
Journal title
Nuclear Instruments and Methods in Physics Research Section A
Record number
1993730
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