Author/Authors :
Bisello، نويسنده , , D. and Paccagnella، نويسنده , , A. and Pantano، نويسنده , , D. and Gotra، نويسنده , , Yu. and Malakhov، نويسنده , , N. and Jejer، نويسنده , , V. and Kushpil، نويسنده , , V. and Sadygov، نويسنده , , Z.، نويسنده ,
Abstract :
The main electrical characteristics at room temperature of metal-resistive layer-semiconductor avalanche detectors are presented for devices with a Ti/SiC/p-Si structure. The device response has been tested by using a 90Sr source. The consequences on the device behavior induced by substrate inhomogeneities have been modeled, and compared with those occurring in conventional Avalanche Photo Diodes (APD).
