Title of article
Metal-Resistive layer-Silicon (MRS) avalanche detectors with negative feedback
Author/Authors
Bisello، نويسنده , , D. and Paccagnella، نويسنده , , A. and Pantano، نويسنده , , D. and Gotra، نويسنده , , Yu. and Malakhov، نويسنده , , N. and Jejer، نويسنده , , V. and Kushpil، نويسنده , , V. and Sadygov، نويسنده , , Z.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 1995
Pages
4
From page
83
To page
86
Abstract
The main electrical characteristics at room temperature of metal-resistive layer-semiconductor avalanche detectors are presented for devices with a Ti/SiC/p-Si structure. The device response has been tested by using a 90Sr source. The consequences on the device behavior induced by substrate inhomogeneities have been modeled, and compared with those occurring in conventional Avalanche Photo Diodes (APD).
Journal title
Nuclear Instruments and Methods in Physics Research Section A
Serial Year
1995
Journal title
Nuclear Instruments and Methods in Physics Research Section A
Record number
1994819
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