Title of article
Hall effect analysis on neutron irradiated high resistivity silicon
Author/Authors
Biggeri، نويسنده , , U. and Borchi، نويسنده , , E. and Bruzzi، نويسنده , , M. and Lazanu، نويسنده , , S.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 1995
Pages
3
From page
131
To page
133
Abstract
The electrical conductivity and the Hall coefficient of high resistivity n-type silicon have been measured before and after irradiation with high fluences of fast neutrons. A model based on the dopant concentration changes observed after irradiation is proposed to describe the sample resistivity dependence on the neutron fluence. From the fit of the experimental data, the initial dopant concentrations and the parameters describing donor and acceptor modifications have been determined.
Journal title
Nuclear Instruments and Methods in Physics Research Section A
Serial Year
1995
Journal title
Nuclear Instruments and Methods in Physics Research Section A
Record number
1994848
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