Title of article :
Characterization procedures for double-sided silicon microstrip detectors
Author/Authors :
Bruner، نويسنده , , N.L and Frautschi، نويسنده , , M.A and Hoeferkamp، نويسنده , , M.R and Seidel، نويسنده , , S.C، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 1995
Pages :
23
From page :
315
To page :
337
Abstract :
Since double-sided silicon microstrip detectors are still evolving technologically and are not yet commercially available, they require extensive electrical evaluation by the user to ensure they were manufactured to specifications. In addition, measurements must be performed to determine detector operating conditions. Procedures for measuring the following quantities are described: - Leakage current, - Depletion voltage, - Bias resistance, - Interstrip resistance, - Coupling capacitance, - Coupling capacitor breakdown voltage.
Journal title :
Nuclear Instruments and Methods in Physics Research Section A
Serial Year :
1995
Journal title :
Nuclear Instruments and Methods in Physics Research Section A
Record number :
1995478
Link To Document :
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