• Title of article

    Characterization procedures for double-sided silicon microstrip detectors

  • Author/Authors

    Bruner، نويسنده , , N.L and Frautschi، نويسنده , , M.A and Hoeferkamp، نويسنده , , M.R and Seidel، نويسنده , , S.C، نويسنده ,

  • Issue Information
    روزنامه با شماره پیاپی سال 1995
  • Pages
    23
  • From page
    315
  • To page
    337
  • Abstract
    Since double-sided silicon microstrip detectors are still evolving technologically and are not yet commercially available, they require extensive electrical evaluation by the user to ensure they were manufactured to specifications. In addition, measurements must be performed to determine detector operating conditions. Procedures for measuring the following quantities are described: - Leakage current, - Depletion voltage, - Bias resistance, - Interstrip resistance, - Coupling capacitance, - Coupling capacitor breakdown voltage.
  • Journal title
    Nuclear Instruments and Methods in Physics Research Section A
  • Serial Year
    1995
  • Journal title
    Nuclear Instruments and Methods in Physics Research Section A
  • Record number

    1995478