Title of article
Characterization procedures for double-sided silicon microstrip detectors
Author/Authors
Bruner، نويسنده , , N.L and Frautschi، نويسنده , , M.A and Hoeferkamp، نويسنده , , M.R and Seidel، نويسنده , , S.C، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 1995
Pages
23
From page
315
To page
337
Abstract
Since double-sided silicon microstrip detectors are still evolving technologically and are not yet commercially available, they require extensive electrical evaluation by the user to ensure they were manufactured to specifications. In addition, measurements must be performed to determine detector operating conditions. Procedures for measuring the following quantities are described: - Leakage current, - Depletion voltage, - Bias resistance, - Interstrip resistance, - Coupling capacitance, - Coupling capacitor breakdown voltage.
Journal title
Nuclear Instruments and Methods in Physics Research Section A
Serial Year
1995
Journal title
Nuclear Instruments and Methods in Physics Research Section A
Record number
1995478
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