Author/Authors :
Bracken، نويسنده , , D.S. and Kwiatkowski، نويسنده , , K. and Morley، نويسنده , , K.B. and Renshaw Foxford، نويسنده , , E. and Komisarcik، نويسنده , , K. and Rader، نويسنده , , A.J. and Viola، نويسنده , , V.E.، نويسنده ,
Abstract :
Ion-implanted passivated silicon detectors undergo a gradual, then rapid increase in leakage current when exposed to ionizing radiation in the presence of gas between 5–200 Torr. Conditions for generating this effect are discussed and a mechanism is proposed to explain this behavior. Methods for preventing this effect and for recovering detectors damaged in this way are presented.
