Title of article
Quasiparticle lifetimes and tunneltimes in SIS junctions for X-ray spectroscopy
Author/Authors
Luiten، نويسنده , , O.J and van Lieshout، نويسنده , , H.L and Michels، نويسنده , , F.A and Valko، نويسنده , , P and Bruijn، نويسنده , , M.P and Kiewiet، نويسنده , , F and de Korte، نويسنده , , P.A.J and Adelerhof، نويسنده , , D.J and Hamster، نويسنده , , A.W and Brons، نويسنده , , C.G.S and Flokstra، نويسنده , , J، نويسنده ,
Pages
3
From page
72
To page
74
Abstract
The quasiparticle lifetimes and tunneltimes in SIS tunnel junctions are essential parameters in the development of these devices for high resolution X-ray spectroscopy. We present a simple analytical model which allows us to calculate both the risetime and the total charge of the integrated tunnel current following an X-ray event. Simultaneous measurement of both the total charge and the risetime thus becomes a useful diagnostic tool for quantitative analysis. We have applied the model to recent X-ray measurements on a NbAlOx SIS junction. We find that the energy resolution achieved in this device is mainly limited by variations in the thickness of the counter electrode.
Journal title
Astroparticle Physics
Record number
1996954
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