Author/Authors :
Parlato، نويسنده , , L and Peluso، نويسنده , , G and Pepe، نويسنده , , G and Scotti di Uccio، نويسنده , , U and Cristiano، نويسنده , , R and Espositio، نويسنده , , Emanuela and Frunzio، نويسنده , , L and Pagano، نويسنده , , S and Akoh، نويسنده , , H and Nakagawa، نويسنده , , H and Takada، نويسنده , , S and Gutsche، نويسنده , , M and Kraus، نويسنده , , H، نويسنده ,
Abstract :
We have designed and tested 5 × 5 mm2 chips containing island type STJs with different geometries, fabricated on Si substrates in the configuration Nb/AlAlOx/Nb and using a NbN overlayer acting both as wiring and radiation absorber. The aim is to investigate the advantages of the trapping effect due to the Nb layer trap. In fact, for the NbNNb bilayer the scattering time is much faster than the values calculated for other Nb based bilayers, leading to more efficient trapping processes. The junctions have been characterized by tunneling and Josephson current measurements down to 0.5 K. Experimental results concerning the response of the devices under X-ray irradiation down to 60 mK are presented and discussed.
