Author/Authors :
Patel، نويسنده , , C and Brink، نويسنده , , P.L and Goldie، نويسنده , , D.J and Booth، نويسنده , , N.E and Salmon، نويسنده , , G.L and Gatti، نويسنده , , F and Vitale، نويسنده , , S، نويسنده ,
Abstract :
AlOxAl superconducting tunnel junctions (STJs) have been photolithographically fabricated on a 350 micron thick Ta foil to investigate the properties of the Al quasiparticle trap. The measured current-voltage (I-V) characteristics are shown to be reasonably well fitted by using modified densities of states generated by McMillanʹs model of the proximity effect and by assuming a 24% normal metal component in the base Ta(foil)Al electrode.
