Author/Authors :
Kishimoto، نويسنده , , M and Ukibe، نويسنده , , M and Katagiri، نويسنده , , M and Nakazawa، نويسنده , , Kurakado، نويسنده , , M، نويسنده ,
Abstract :
We have made up a low noise charge sensitive amplifier with cooled 4-JFETs for a large area superconducting tunnel junction (STJ). These JFETs were operated at about 130 K. Each JFET (2SK190) dissipates about 15 mW. A high energy resolution of 73 eV for 5.9 keV X-rays and 61 eV for pulser signals have been achieved with a 178 μm × 178 μm Nb/AlAlOx/Al/Nb STJ having a junction capacitance of 1900 pF.