Author/Authors :
Matheson، نويسنده , , J. and Robbins، نويسنده , , M. and Watts، نويسنده , , S. and Hall، نويسنده , , G. and MacEvoy، نويسنده , , B.، نويسنده ,
Abstract :
A semiconductor device model, DLTS measurements and defect kinetics considerations lead us to propose an explanation for the major changes in the macroscopic properties of silicon detectors caused by neutron irradiation.
