The effect of radiation induced defects on the performance of high resistivity silicon diodes
Author/Authors :
Matheson، نويسنده , , J. and Robbins، نويسنده , , M. and Watts، نويسنده , , S.، نويسنده ,
Pages :
4
From page :
224
To page :
227
Abstract :
An overview of defect kinetics in high resistivity silicon is presented. A device model which gives type inversion due to the presence of deep acceptors is described.
